Method of making a real time ion implantation metal silicide mon

Details Method of making a real time ion implantation metal silicide mon Method of making a real time ion implantation metal silicide mon

1994-07-05

1995-09-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 7, 148DIG83, 148DIG162, H01L 2100, H01L 2166

Patent

active

054515297

ABSTRACT:
A novel technique for the real time monitoring of ion implant doses has been invented. This is the first real-time monitor to cover the high dosage range (10E13 to 10E16 ions/sq. cm.). The underlying principle of this new technique is the increase in the resistance of a metal silicide film after ion implantation. Measurement of this increase in a silicide film that has been included in a standard production wafer provides an index for correlation with the implanted ion dose.

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S. Aronowitz et al., J. Electrochem. Soc. (Solid St. Sci & Tech.) Dec. 1983, p. 2502 "Sheet Resistance and Junction Depth Relat. in Implanted Species Diffusion".

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