Method of making a precision capacitor array

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

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438941, H01L 218258

Patent

active

056354215

ABSTRACT:
Capacitor arrays may be incorporated within silicon integrated circuits as part of analog-to-digital or digital-to-analog converters. Capacitance ratios between individual capacitors need to be controlled to better than 1%. Because of microloading effects during etching, the areas of the electrodes of the capacitors located along the edges of the array have tended to be slightly less than the areas of electrodes located completely inside the array. The present invention solves this problem by providing additional electrodes located along the periphery of the array, spaced the same distance away from the array edge as the spacing between electrodes inside the array.

REFERENCES:
patent: 4577390 (1986-03-01), Haken
patent: 5173437 (1992-12-01), Chi
patent: 5322438 (1994-06-01), McNutt et al.
patent: 5356826 (1994-10-01), Natsume

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