Method of making a power switching trench MOSFET having aligned

Details Method of making a power switching trench MOSFET having aligned Method of making a power switching trench MOSFET having aligned

1998-03-30

1999-04-27

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making regenerative-type switching device

438138, 438270, H01L 21332

Patent

active

058973435

ABSTRACT:
A trench power switching transistor (10) is fabricated having sub-micron features on a body layer (26) without using sub-micron lithography. An opening in a field oxide layer (28) defines an area for implanting a source region (30) in the body layer (26) that is self-aligned to a first edge (28A) and a second edge (28B) of the field oxide layer (28). Sidewall spacers (32) are formed in accordance with the first and second edges (28A and 28B) of the field oxide layer (28). A trench is aligned to the sidewall spacers (32) and formed centered within the source region (30). An implant layer (42) formed between sections of the power switching transistor (10) is aligned to the sidewall spacers (32) at the first and second edges (28A and 28B).

REFERENCES:
patent: 4971929 (1990-11-01), D'Anna et al.
patent: 5527720 (1996-06-01), Goodyear et al.
patent: 5624855 (1997-04-01), Sumida
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5723376 (1998-03-01), Takeuchi et al.
patent: 5770514 (1998-06-01), Matsuda et al.

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