Method of making a power IC structure with enhancement and/or CM

Details Method of making a power IC structure with enhancement and/or CM Method of making a power IC structure with enhancement and/or CM

1987-06-19

1989-01-03

Roy, Upendra

Fishing, trapping, and vermin destroying

437 29, 437 34, 437 54, 437 56, 437 74, H01L 2122, H01L 21306, H01L 21265

Patent

active

047957166

ABSTRACT:
A process for fabricating a power IC structure which includes the following masking steps:

REFERENCES:
patent: 4346512 (1982-08-01), Liang et al.
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4403395 (1983-09-01), Curran
patent: 4409725 (1983-10-01), Hotta et al.
patent: 4443931 (1984-04-01), Baliga et al.
patent: 4616405 (1986-10-01), Yasuoka
patent: 4633572 (1987-01-01), Rusch et al.
patent: 4637125 (1987-01-01), Iwasan et al.

Affiliated with

Also associated with

Rating

Method of making a power IC structure with enhancement and/or CM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a power IC structure with enhancement and/or CM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a power IC structure with enhancement and/or CM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2168343