Method of making a polysilicon emitter bipolar transistor

Details Method of making a polysilicon emitter bipolar transistor Method of making a polysilicon emitter bipolar transistor

1990-08-15

1992-03-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437186, 437233, 148DIG10, H01L 21265, H01L 2973

Patent

active

050968408

ABSTRACT:
The inventive method of making a poly-Si emitter transistor (PET) comprises opening an emitter window in a dielectric (typically SiO.sub.2) layer, and depositing onto the thus exposed surface and/or into the single crystal Si material that underlies the exposed surface at least one atomic species. This deposition step is following by the conventional poly-Si deposition, dopant implantation and "drive-in". In a currently preferred embodiment the novel deposition step comprises a low dose, low energy As implantation (5.times.10.sup.13 -2.times.10.sup.15 atoms/cm.sup.2, 0.1-5 keV). The novel method can result in significantly improved device characteristics, e.g., in a doubling of h.sub.FE, as compared to analogous prior art PETs.

REFERENCES:
patent: 4818711 (1989-04-01), Choksi et al.
patent: 4853342 (1989-08-01), Taka et al.
"Polysilicon Emitter Bipolar Transistors", edited by A. K. Kapoor et al., IEEE Press, 1989, pp. 3-16.

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