Method of making a polycide gate using a titanium nitride cappin

Details Method of making a polycide gate using a titanium nitride cappin Method of making a polycide gate using a titanium nitride cappin

1988-04-14

1990-02-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437246, 437946, 148DIG15, 148DIG17, 148DIG147, H01L 21283

Patent

active

049002570

ABSTRACT:
A semiconductor device has a multilayer comprising a refractory metal silicide and a metal nitride on a silicon layer. The metal nitride prevents the silicon layer from being oxidized so that a good ohmic contact is obtained. A method of manufacturing the semniconductor device comprises steps of forming a polysilicon layer, implanting impurity ions into the polysilicon, removing a self oxidation film from the polysilicon layer, sequentially forming refractory metal and its nitride, patterning, and silicifying the metal. The method provides a semiconductor device having a good ohmic contact, a reduced resistivity of interconnections and high reliability.

REFERENCES:
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patent: 4329706 (1982-05-01), Crowder et al.
patent: 4472237 (1984-09-01), DeSlauriers et al.
patent: 4746219 (1988-05-01), Holloway et al.
Tsai et al., J. Electrochem. Soc., vol. 128, No. 10, Oct. 1981, pp. 2207-2214.

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