Method of making a plurality of MOSFETs having different thresho

Details Method of making a plurality of MOSFETs having different thresho Method of making a plurality of MOSFETs having different thresho

1980-11-19

1984-09-25

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148 15, 148187, 357 91, H01L 2978, H01L 21265, H01L 700

Patent

active

044728719

ABSTRACT:
An integrated circuit using MOSFETs having varying threshold voltages permitting improved performance and reduced area utilization on a monolithic semiconductor chip is produced by selectively varying ion implantation doses in the channels of the MOSFETs. By repeated masking and implanting steps, selected MOSFETs are implanted with differing doses of ions and combinations of doses, thereby forming circuit portions with MOSFETs having threshold voltages tailored to optimize different characteristics associated with different circuit portions.

REFERENCES:
patent: 3775693 (1973-11-01), Proebsting
patent: 3868274 (1975-02-01), Hubar et al.
patent: 3895966 (1975-07-01), MacDougall et al.
patent: 3898105 (1975-08-01), Mai et al.
patent: 4052229 (1977-10-01), Pashley
patent: 4274105 (1981-06-01), Crowder et al.
patent: 4276095 (1981-06-01), Beilstein et al.

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