Method of making a planar wiring in an insulated groove using al

Details Method of making a planar wiring in an insulated groove using al Method of making a planar wiring in an insulated groove using al

1995-02-21

1997-03-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437190, 437195, 437197, 148DIG50, 257758, 257760, 257765, 257767, H01L 2144

Patent

active

056144393

ABSTRACT:
A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.

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