Method of making a planar polysilicon bipolar device

Details Method of making a planar polysilicon bipolar device Method of making a planar polysilicon bipolar device

1985-10-02

1987-08-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 34, 357 59, 357 60, 437201, 437160, H01L 2108, H01L 21302, H01L 21461

Patent

active

046867635

ABSTRACT:
A highly planarized integrated circuit structure having at least one bipolar device is described as well as a method of making the structure. The structure comprises a substrate having a field oxide grown thereon with openings defined therein respectively for formation of a collector contact region and a base/emitter region for a bipolar device in the substrate. All of the contacts of the bipolar device are formed using polysilicon which fills the defined openings in the field oxide resulting in a highly planarized structure.

REFERENCES:
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4319954 (1982-03-01), White et al.
patent: 4445268 (1984-05-01), Hirao
patent: 4542580 (1985-09-01), Delivorias

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