Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-09-29
1985-03-19
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 148 15, 148187, 357 91, H01L 2120, H01L 21302
Patent
active
045050236
ABSTRACT:
A planar compound semiconductor insulated gate field effect transistor and a virtual self-aligned process for making the same. The device includes a semi-insulating InP substrate in which doped source and drain regions separated by a channel region are located. An insulated gate is located on the surface of the substrate over the channel region. The device is fabricated by a virtual or partially self-aligned method wherein the channel region is defined by forming channel alignment insulating layers on the surface of the substrate. Source and drain regions, aligned with the channel alignment layers, are formed in the substrate by ion-implantation. The remainder of the device is formed on the surface of the substrate.
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Bark Marvin L.
Tseng Wen F.
Beers Robert F.
Ellis William T.
Forrest John L.
Roy Upendra
The United States of America as represented by the Secretary of
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