Method of making a planar charge coupled device with edge aligne

Details Method of making a planar charge coupled device with edge aligne Method of making a planar charge coupled device with edge aligne

1995-11-13

1998-02-17

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438144, H01L 2170, H01L 2700

Patent

active

057190755

ABSTRACT:
A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform dielectric; then implanting ions of a second conductivity type into the substrate, then patterning closely spaced first conductive strips of a first conductive layer on the dielectric, then further implanting ions of the first or second conductivity type in the regions between said first conductive strips, then depositing uniformly a second conductive layer electrically isolated from the first conductive strips by an insulative region, then entirely removing by uniform planarization those portions of the second conductive layer disposed over regions of the first conductive strips so as to form coplanar, alternating first and thick electrically isolated conductive strips, then depositing a second insulative layer, then electrically connecting selected adjacent first and second conductive strips together to form first and second composite gate electrodes, then further connecting selected composite gate electrodes together with a planar metallic conductor.

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