Method of making a photodiode with reduced junction area

Details Method of making a photodiode with reduced junction area Method of making a photodiode with reduced junction area

1993-05-21

1994-08-16

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 69, 437 70, 257446, 257461, H01L 3118

Patent

active

053386914

ABSTRACT:
The present invention discloses a light-receiving element, and method for making same, for a charge storage light sensor having a first semiconductor later of a first conductive type with an element isolation region disposed thereon. The element isolation regions are formed to produce tilted edges embedded within the first semiconductor layer and to also produce an embedded region of a second conductive type. The embedded region is effective to collect the photoelectric current resulting from light exposure to the first semiconductor layer regions upon the application of a reverse bias potential to the embedded region.

REFERENCES:
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 4743563 (1988-05-01), Pfiester et al.
patent: 5100830 (1992-03-01), Morita

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