Method of making a P-channel bipolar transistor

Details Method of making a P-channel bipolar transistor Method of making a P-channel bipolar transistor

1996-11-20

1998-03-17

Dutton, Brian

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438140, H01L 21265, H01L 2170, H01L 2100

Patent

active

057286078

ABSTRACT:
The specification describes a p-channel IGBT with improved performance attributable to a vertical underlying n-p-n structure, and fabricated by a process that is fully compatible with simultaneously forming complementary MOS and TGBT devices.

REFERENCES:
patent: 5023678 (1991-06-01), Kinzer
patent: 5246877 (1993-09-01), Hisamoto et al.
patent: 5360987 (1994-11-01), Shibib
patent: 5501994 (1996-03-01), Mei

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