Method of making a nonvolatile semiconductor memory device by im

Details Method of making a nonvolatile semiconductor memory device by im Method of making a nonvolatile semiconductor memory device by im

1992-06-18

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437 37, 437941, H01L 21266

Patent

active

052504557

ABSTRACT:
A nonvolatile semiconductor memory comprising a silicon semiconductor substrate and formed thereon a gate insulating film, wherein an ion belonging to the same Group IV in the periodic table as the ion of said silicon semiconductor substrate belongs is shot into said gate insulating film by ion implantation in a dose of not less than 10.sup.16 cm.sup.-2 to form an ion-implanted region therein in such a way that a peak of impurity density of the ion is present at the gate insulating film side from the interface between said semiconductor substrate and said gate insulating film.
Also disclosed are an MOS integrated circuit comprising the nonvolatile semiconductor memory, and a method of making the nonvolatile semiconductor memory.

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Kalnitsky et al, "Memory Effect and Enhanced Conductivity in Si-Implanted Thermally Grown S10.sub.2 ", IEEE Transactions on Electron Devices, vol. ED-34, No. 11 (Nov. 1987), pp. 2372-2373.

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