Method of making a nonvolatile memory programmable by a heat...

Details Method of making a nonvolatile memory programmable by a heat... Method of making a nonvolatile memory programmable by a heat...

2006-01-10

2006-01-10

Tran, Andrew Q. (Department: 2824)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S129000, C438S128000, C438S467000, C438S470000, C438S466000, C365S163000, C365S148000

Reexamination Certificate

active

06984548

ABSTRACT:
A nonvolatile memory cell occupying a minimum chip area is provided with a cell structure that includes two or more base materials being programmable by a heat induced chemical reaction to form a layer or layers of alloy. The formation of alloy results in a change in resistance of the cell structure so that one or more programmed states are determined. A semiconductor memory constructed by a large number of the nonvolatile memory cells can be obtained in a compact manner with simple and as few as possible steps. This process vertically stacked layers, and this semiconductor memory is thus easily to be combined with other integrated circuits on a single chip.

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