Method of making a nonvolatile memory device having a sidewall i

Details Method of making a nonvolatile memory device having a sidewall i Method of making a nonvolatile memory device having a sidewall i

1993-05-27

1995-03-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 35, 437240, H01L 21265

Patent

active

053977246

ABSTRACT:
A nonvolatile memory device having a control gate laid over a floating gate via an interlayer insulating layer, wherein the side portions of the floating gate and the control gate have a side wall insulating film doped with phosphorus, whereby the retention of the charges stored at the floating gate is improved, and a process for production of a nonvolatile memory device comprising forming a gate insulating film, a floating gate, an interlayer insulating layer, and a control gate on a semiconductor substrate, then forming a side wall insulating film doped with phosphorus on the semiconductor substrate by chemical vapor deposition and anisotropically etching the side wall insulating layer so as to form a side wall insulating film doped with phosphorus at the side portions of the floating gate and the control gate.

REFERENCES:
patent: 5068697 (1991-11-01), Noda et al.
patent: 5194929 (1993-03-01), Ohshima et al.
patent: 5256584 (1993-10-01), Hartmann

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