Method of making a noise-isolated buried resistor by implanting

Details Method of making a noise-isolated buried resistor by implanting Method of making a noise-isolated buried resistor by implanting

1999-01-13

2000-05-02

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Resistor

338311, 257536, H01L 2120

Patent

active

060572043

ABSTRACT:
A noise-isolated buried resistor satisfies the requirements for low-noise analog designs requiring well controlled ohmic resistors. A field shield is provided between the buried resistor and the substrate to isolate the buried resistor from the substrate noise. This is accomplished by using the standard buried resistor layout and mask sequence with two exceptions. First, the buried resistor is placed in an N-well region, rather than simply a P-well region. Second, a boron implant is added through the buried resistor mask to provide a P-well inside the N-well to isolate the buried resistor electrically from the N-well. The N-well may then be electrically connected to a "quiet" ground. The P-well inside of the N-well may be left floating.

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