Method of making a mushroom-shaped gate electrode of semiconduct

Details Method of making a mushroom-shaped gate electrode of semiconduct Method of making a mushroom-shaped gate electrode of semiconduct

1993-02-08

1994-02-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437912, 437944, 148DIG100, H01L 21265

Patent

active

052886549

ABSTRACT:
A mushroom-shaped gate electrode has a lower end in a recess in a semiconductor active layer on a semiconductor substrate. The gate electrode has an enlarged head. A metallic side wall is disposed on a portion of the leg of the gate electrode adjacent the head. Thus, the gate length of a semiconductor device, such as a field effect transistor, is reduced while the effective cross-sectional area of the gate electrode is increased whereby the noise characteristics of the semiconductor device are improved.

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