Method of making a MOS device

Details Method of making a MOS device Method of making a MOS device

1977-01-28

1978-09-12

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

357 23, H01L 2978

Patent

active

041135334

ABSTRACT:
A method of making a MOS device, for instance, metal-oxide semiconductor type integrated circuit, is disclosed which comprises the following steps:
Sequentially forming on a specified part of single crystal silicon substrate,

REFERENCES:
patent: 3615873 (1971-10-01), Sluss, Jr.
patent: 3852104 (1974-12-01), Kooi
patent: 3906620 (1975-09-01), Anzai et al.
patent: 3936859 (1976-02-01), Dingwall
patent: 3943542 (1976-03-01), Ho et al.
patent: 3958323 (1976-05-01), De La Moneda
patent: 4035198 (1977-07-01), Dennard et al.
Appels et al., "Local Oxidation of Si -- Device Technology", Phillips Res. Repts. 25 (1970), 118.
D. M. Brown et al., "Refractory Metal Si Device Technology", Solid State Electr. 11 (1968) 1105.
Vadasz et al., "Silicon Gate Technology", IEEE Spectrum, Oct. 1969, p. 28.

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