Method of making a monolithic integrated circuit having compound

Details Method of making a monolithic integrated circuit having compound Method of making a monolithic integrated circuit having compound

1992-10-28

1994-10-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437126, 437133, H01L 2120

Patent

active

053568311

ABSTRACT:
A semiconductor device and processing technique is provided for monolithic integration of a single crystal compound element semiconductor on a ceramic substrate. A high resistivity semi-insulating buffer layer is epitaxially grown on the ceramic substrate and has an elastically transitional lattice constant matching at its lower surface the lattice constant of the ceramic substrate, and matching at its upper surface the lattice constant of the semiconductor layer.

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