Method of making a monolithic complementary Darlington amplifier

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29578, 29580, 29577C, 148 15, 148187, 148188, 156649, 357 44, 357 46, 357 50, 357 92, H01L 2120, H01L 2176, H01L 2180

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043701795

ABSTRACT:
A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The method of the invention is particularly applicable to making mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.

REFERENCES:
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patent: 3911269 (1975-10-01), Hart et al.
patent: 3930909 (1976-01-01), Schmitz et al.
patent: 3998662 (1976-12-01), Anthony et al.
patent: 4058825 (1977-11-01), Bonis et al.
patent: 4078208 (1978-03-01), Hart et al.
patent: 4138690 (1979-02-01), Nawa et al.

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