Method of making a monitoring pattern to measure a depth and...

Details Method of making a monitoring pattern to measure a depth and... Method of making a monitoring pattern to measure a depth and...

2004-01-15

2008-11-18

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S017000, C438S424000, C257SE21530, C257SE21531

Reexamination Certificate

active

07452734

ABSTRACT:
A method of making a monitoring pattern to measure a depth and profile of a shallow trench isolation is disclosed. An example method of making a monitoring pattern of a shallow trench isolation profile forms a first pattern on a substrate to monitor a depth of a first shallow trench isolation. In the example method, the first pattern includes a plurality of unequally spaced active regions on the substrate. The example method also forms a second pattern on the substrate to measure electrical effects associated with a depth and a profile of a second shallow trench isolation. In the example method, the second pattern includes a plurality of equally spaced active regions on the substrate and a plurality of contact regions that electrically connect the equally spaced active regions.

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