Method of making a microelectronic and/or optoelectronic...

Details Method of making a microelectronic and/or optoelectronic... Method of making a microelectronic and/or optoelectronic...

2007-08-21

2007-08-21

Fahmy, Wael (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21027

Reexamination Certificate

active

11223515

ABSTRACT:
A circuitry sheet (322) comprising an electronic device layer stack (304) containing electronic devices, e.g., thin-film transistors, or portions thereof, formed by removing material from both sides of the device layer stack. The circuitry sheet may be made by an electronic/optoelectronic device manufacturing method (200) that includes the steps of forming the device layer stack on a temporary substrate (300), removing material from both sides of the device layer stack, and then attaching a permanent substrate (348) to the device layer stack. The method uses one or more resist layers (600) that may be activated simultaneously and independently to impart distinct circuit pattern images (603, 608, 612) into each of a plurality of image levels (612, 616, 620) within each resist layer, thereby obviating repetitive sequential exposure, registration and alignment steps.

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