Fishing – trapping – and vermin destroying
Patent
1993-01-19
1995-10-03
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437974, 148DIG12, H01L 21465
Patent
active
054552028
ABSTRACT:
A microelectronic device is fabricated on a first substrate (40), and transferred to a second substrate (58). The first substrate (40) has a silicon etchable layer (42), a silicon dioxide etch-stop layer (44) overlying the etchable layer (42), and a single-crystal wafer (46) overlying the etch-stop layer (44). A microelectronic circuit element (48) is formed in the wafer (46) of the first substrate (40). The wafer (46) of the first substrate (40) is attached to an aluminum oxide temporary substrate (52), and the etchable layer (42) of the first substrate (40) is etched away down to the etch-stop layer (44) to leave a primary device structure. The etch-stop layer (44) may optionally be processed to remove all or a part of the layer. An exposed surface (56) of the primary device structure is fixed to the second substrate (58), and the temporary substrate (52) is removed.
REFERENCES:
patent: 3918148 (1975-11-01), Magdo et al.
patent: 3959045 (1976-05-01), Antypas
patent: 5013681 (1991-05-01), Codbey et al.
patent: 5102821 (1992-04-01), Moslehi
patent: 5110748 (1992-05-01), Sarma
patent: 5147808 (1992-09-01), Pronko
patent: 5213986 (1993-05-01), Pinker et al.
patent: 5240876 (1993-08-01), Gaul et al.
Haisma, J. et al., "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations", Japan Jour. App. Phy. 28(8), 1989.
Kimura et al, "Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate" Applied Physics Letters 43(3), May 1983.
Grupen-Shemasky et al., "Stress in GaAs bonded to Si", Proceedings of the First International Symposium on Semiconductor Wafer Bonding; Science, Technology and Applications, Oct. 13-18, 1991.
Bendik Joseph J.
Malloy Gerard T.
Booth Richard A.
Chaudhuri Olik
Denson-Low W. K.
Hughes Aircraft Company
Schubert W. C.
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