Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-05-24
2010-02-23
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C257S414000, C257SE21215
Reexamination Certificate
active
07666798
ABSTRACT:
A microfabricated structure and method of making that includes forming a first layer of material on a substrate, forming patterned sacrificial material having a predetermined shape on the first layer of material, and forming a second layer of material over the first layer and the patterned sacrificial material, which is then removed to form an encapsulated cavity. Ideally, the first and second layers are formed of the same type material. A structural support layer can be added to the second layer. Openings can be formed in the cavity, and the cavities can be layered side by side, vertically stacked with interconnections via the openings, and a combination of both can be used to construct stacked arrays with interconnections throughout.
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patent: 2003/0183916 (2003-10-01), Heck et al.
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patent: 2005/0048688 (2005-03-01), Patel et al.
patent: 2007/0023851 (2007-02-01), Hartzell et al.
Bryant Frank
Robinson Murray
Carlson David V.
Fulk Steven J
Jorgenson Lisa K.
STMicroelectronics Inc.
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