Method of making a metalized substrate having a thin film barrie

Details Method of making a metalized substrate having a thin film barrie Method of making a metalized substrate having a thin film barrie

1977-11-18

1979-05-08

Tung, T.

Chemistry: electrical and wave energy

Processes and products

204 38R, 427 99, 427124, 427125, 427126, 428630, 428633, C25D 554

Patent

active

041535189

ABSTRACT:
A method of fabricating a hybrid circuit including a siliceous substrate and thick metal conductors. A thin film barrier layer is provided intermediate the substrate and a vacuum-deposited metal layer, which metal layer is subsequently electroplated to provide the desired metal thickness. The barrier layer, which may suitably be a refractory metal oxide such as the oxides of zirconium, tantalum, titanium, or tungsten, prevents loss of adhesion between the vacuum deposited metal and substrate that occurs during electroplating.

REFERENCES:
patent: 3106489 (1963-10-01), Lepselter
patent: 3564353 (1971-02-01), Corak et al.
patent: 3890177 (1975-06-01), Pfahnl et al.
patent: 3922387 (1975-11-01), Larry
patent: 3950586 (1976-04-01), Davey
patent: 3982218 (1976-09-01), Adler et al.

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