Method of making a metal-oxide semiconductor field-effect transi

Details Method of making a metal-oxide semiconductor field-effect transi Method of making a metal-oxide semiconductor field-effect transi

1991-11-29

1994-03-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437 30, 437 35, 437913, H01L 21265

Patent

active

052926745

ABSTRACT:
Disclosed is an improved metal oxide-semiconductor field-effect transistor having two diffused regions extending apart from under one and the other edge of the gate in the opposite directions, at least one of the diffused regions being composed of a first leastdoped, short section, a second lightly-doped, short section, and a third heavily-doped, long section. Either diffused region may be used as drain. The series-connection of least and lightly-doped sections of the same longitudinal size or depth improves the current driving capability of the semiconductor device. Also, methods of making such MOSFETs are disclosed.

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Profiled Lightly Doped Drain (PLDD) Structure for High Reliable NMOS-FETs, Y. Toyoshima, et al, Digest of Technical Papers, Symposium of VLSI Technology, pp. 118-119 (1985).
International Electron Devices Meeting 1980 Technical Digest, pp. 764-767; W. R. Hunter, et al., "New Edge-Defined Vertical-Etch Approaches for Submicromiter MOSFET Fabrication."

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