Method of making a metal oxide semiconductor field effect transi

Details Method of making a metal oxide semiconductor field effect transi Method of making a metal oxide semiconductor field effect transi

1992-03-11

1993-11-16

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437 44, 257336, 257344, H01L 21336

Patent

active

052623378

ABSTRACT:
A metal oxide semiconductor field effect transistor (MOSFET) and a method of making the same, capable of avoiding the generating of a high horizontal electric field in low concentration source and drain regions. In accordance with the invention, a p-type substrate is patterned to form a channel region of a convex type thereon. At opposite side portions of the channel region, low concentration source and drain regions are formed which is in turn covered with a gate. High concentration source and drain regions are formed in the portions of the substrate disposed outwardly of opposite side portions of the gate and near the surface of the substrate. Electric fields of low concentration source and drain regions can be controlled by the gate, since the regions are connected to the gate, via the gate oxide layer. As a result, it is possible to avoid the generation of a high horizontal electric field in low concentration source and drain regions.

REFERENCES:
patent: 4960723 (1990-10-01), Davies
patent: 5041885 (1991-08-01), Gualandris et al.
patent: 5057444 (1991-10-01), Fuse et al.

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