Method of making a MESFET having same type conductivity for sour

Details Method of making a MESFET having same type conductivity for sour Method of making a MESFET having same type conductivity for sour

1979-05-14

1982-04-20

Roy, Upehdra

Metal treatment

Compositions

Heat treating

29571, 148187, 357 23, 357 91, H01L 2120, H01L 21306

Patent

active

043257470

ABSTRACT:
A MESFET is disclosed wherein a gallium arsenide semiconductor material is doped. The doping magnitude differs in the source area, drain area, and in the gate area. An increase of the dielectric strength without an increase of parasitic resistances is provided. In the manufacture of the MESFET, shadowing techniques are employed to vary the doping magnitudes.

REFERENCES:
patent: 4048712 (1977-09-01), Buiatti
patent: 4089712 (1978-05-01), Joy et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4193182 (1980-03-01), Lee
patent: 4232439 (1980-11-01), Shibata
Fukuta et al. IEEE, vol. MTT-24, No. 6 (1976) pp. 312-317.
Wemple et al. in Inst. Phys. Conf. Series No. 33b, 1977, Chapt. 5, pp. 262-270.
Ohata et al. IEEE-Trans. Electron Device, ED-24 (1977) 1129-1130.
Hasegawa et al., IEEE Int'l. Solid State Circuits Conf. Digest Tech. Papers, (1978) pp. 118.

Affiliated with

Also associated with

Rating

Method of making a MESFET having same type conductivity for sour does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a MESFET having same type conductivity for sour, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a MESFET having same type conductivity for sour will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1262244