Method of making a memory cell

Details Method of making a memory cell Method of making a memory cell

2006-11-28

2006-11-28

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S301000

Reexamination Certificate

active

07141482

ABSTRACT:
Methods of making memory devices/cells are disclosed. First and second electrode layers and a controllably conductive media therebetween are formed over a dielectric layer that has a planar surface and at least one opening. The layers on the dielectric layer planar surface are removed so that the remaining second electrode surface in the opening is co-planar with the dielectric layer planar surface. Methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.

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