Method of making a mask for proximity effect correction in proje

Details Method of making a mask for proximity effect correction in proje Method of making a mask for proximity effect correction in proje

1991-03-19

1993-05-04

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 364468, 378 35, G03F 100

Patent

active

052081249

ABSTRACT:
Reticle data used to form a reticle pattern is modified to substantially compensate for proximity effects resulting from the diffraction of light by opaque portions of the reticle pattern.
The reticle pattern is thus modified so that the exposed pattern on the wafer results in a desired pattern, wherein isolated features and features in a dense pattern of features formed on the wafer will be identical and have predictable characteristics.

REFERENCES:
patent: 4895780 (1990-01-01), Nissen-Cohen
patent: 4902899 (1990-02-01), Lin
J. D. Cuthbert, "Optical Projection Printing," Solid State Technology, Aug. 1977, pp. 59-69.
J. H. Bruning, "Optical Imaging for Microfabrication," J. Vac. Sci. Technol., 17(5), Sep./Oct. 1980, pp. 1147-1155.

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