Method of making a mark on a wafer such as a semiconductor wafer

Details Method of making a mark on a wafer such as a semiconductor wafer Method of making a mark on a wafer such as a semiconductor wafer

1995-08-23

1997-04-01

Breneman, R. Bruce

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

438 44, 438975, 438702, H01L 21027

Patent

active

056165226

ABSTRACT:
For end-to-end alignment of two optical waveguides one of which is in the form of a strip buried in a semiconductor wafer, a longitudinal lateral mark is used constituted by the flank of a valley etched in the wafer and self-aligned to the strip formed beforehand. To achieve this self-alignment a protection layer is deposited in the area in which the mark is to be formed, a register layer is deposited on top of the protection layer and a photosensitive resin is deposited on top of these layers and the substrate. First selective etching eliminates the register layer at the location of the valley of the mark. Second and third selective etching respectively etch the lateral channels of the strip and then the valley of the mark.

REFERENCES:
patent: 4563765 (1986-01-01), Tsang et al.
patent: 5157003 (1992-10-01), Tsuji et al.
Patent Abstracts Of Japan, vol. 010, No. 279 (E-439), 20 Sep. 1986 & JP-A-61 100928 (Mitsubishi Electric Corp) 19 May 1986.
Patent Abstracts Of Japan, vol. 018, N. 478 (P-1796), 6 Sep. 1994 & JP-A-06 160656 (NGK Insulators Ltd) 7 Jun. 1994.

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