Method of making a low voltage coefficient capacitor

Details Method of making a low voltage coefficient capacitor Method of making a low voltage coefficient capacitor

1995-02-08

1996-06-11

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 62, 437919, 437 47, 148DIG14, H01L 2170, H01L 2700

Patent

active

055255337

ABSTRACT:
The present invention teaches a low voltage coefficient MOS capacitor, and a method of making such a capacitor, having substantially uniform parasitic effects over an operating voltage range and a low voltage coefficient. The capacitor comprises a first conductive layer superjacent a silicon on insulator ("SOI") substrate. The first conductive layer comprises heavily doped silicon having a first conductivity type, while the substrate comprises a second conductivity type. Further, the capacitor comprises an isolation trench surrounding the first conductive layer filled with a dielectric material. Positioned superjacent the first conductive layer is a dielectric layer, thereby forming a dielectric shell on all sides of the first conductive layer except for its upper face. Moreover, a second conductive layer is positioned superjacent the dielectric layer to form a low voltage coefficient capacitor.

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patent: 5409846 (1995-04-01), Hirose

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