Method of making a low resistance indium oxide conductive film

Coating processes – Electrical product produced – Metallic compound coating

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204192, 427101, 427109, 427248B, B05D 512, C23C 1500

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active

040102912

ABSTRACT:
A low resistance indium oxide conductive film is made on a substrate in an atmosphere for vacuum evaporation or sputtering where aqueous vapor or gas mixed with the vapor is introduced or wherein aqueous vapor is generated, by reactive vacuum evaporation or sputtering in said atmosphere using indium oxide or metallic indium as starting material.

REFERENCES:
patent: 3506556 (1970-04-01), Gillery et al.
patent: 3655545 (1972-04-01), Gillery et al.
patent: 3749658 (1973-07-01), Vossen, Jr.
patent: 3764280 (1973-10-01), Lupinski
patent: 3874922 (1975-04-01), Mickelson
patent: 3907660 (1975-09-01), Gillery
J. L. Vossen, "RF Sputtered Transparent Conductors - The System In.sub.2 O.sub.3 -SnO.sub.2," RCA Review, vol. 32, June 1971, pp. 289-296.
J. C. C. Fan et al., "Properties of Sn-Doped In.sub.2 O.sub.3 3 Films Prepared by RF Sputtering," J. Electrochem Soc., vol. 122, pp. 1719-1725 (1975).
D. B. Fraser et al., "Highly Conductive, Transparent Films of Sputtered In.sub.2.sub.-x Sn.sub.x O.sub.3.sub.-4," J. Electrochem Soc., vol. 119, pp. 1368-1374 (1972).

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