Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1997-08-19
1999-07-27
Dang, Trung
Semiconductor device manufacturing: process
Making passive device
Resistor
438152, 438238, 148DIG136, H01L 2120
Patent
active
059306386
ABSTRACT:
A diffused resistor and a method for making the diffused resistor are disclosed. The diffused resistor is formed in a substantially pure portion of the thin semiconductor layer that is formed on an insulating substrate. The thin semiconductor layer has low a number of defects and mid-band gap states. This portion may be located in an electrically isolated region of the thin semiconductor layer. A resistive region is used to provide the resistance of the diff-used resistor. Contact regions are provided continguous with the the resistive region. The diff-used resistor can be formed by themselves or in conjunction with other circuit elements, such as a MOSFET, for example. Accordingly, also disclosed is a method for making the diffused resitor in conjunction with a MOSFET. The diffused resistor and the MOSFET are formed in electrically isolated semiconductor islands. The electrically isolated semiconductor islands are formed from the high quality thin semiconductor layer. Both non-silicide and silicide processes are disclosed. Also disclosed is a differential amplifier circuit that uses the disclosed diffused resistor embodiments.
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Burgener Mark L.
Reedy Ronald E.
Dang Trung
Peregrine Semiconductor Corp.
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