Method of making a low capacitance floating diffusion structure

Details Method of making a low capacitance floating diffusion structure Method of making a low capacitance floating diffusion structure

1994-01-26

1995-02-07

Thomas, Tom

Fishing, trapping, and vermin destroying

437 50, 437175, H01L 3118

Patent

active

053875362

ABSTRACT:
A method for producing a low capacitance floating diffusion structure used for charge to voltage conversion in a solid state image sensor having an output amplifier provided with a gate electrode, comprising the steps of: (a) growing a gate oxide on a substrate of a given conductivity type; (b) forming the gate electrode for the output amplifier on the gate oxide and patterning the gate electrode so as to create an opening through it; (c) introducing through the opening a dopant of a conductivity type opposite to the given conductivity type so as to create a floating diffusion region in the substrate; and (d) creating an ohmic contact between the floating diffusion region and the gate electrode.

REFERENCES:
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patent: 5151380 (1992-09-01), Hynecek
patent: 5288651 (1994-02-01), Nakazawa
Miwada et al, A 100 MHZ Data Rate, 5000-Element CCD Linear Image Sensor with Reset Pulse Level Adjustment Circuit, IEEE International Solid State Circuits Conference 1992, pp. 168-169, 275.

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