Method of making a liquid phase epitaxial-layers of gallium phos

Details Method of making a liquid phase epitaxial-layers of gallium phos Method of making a liquid phase epitaxial-layers of gallium phos

1975-02-04

1976-12-14

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148171, 148 15, 252 623GA, 118415, H01L 21208, H01L 21225

Patent

active

039973778

ABSTRACT:
A method of making a liquid phase epitaxial layer of gallium phosphide on each of two semiconductor wafers which are disposed above and below each other in parallel, and at a predetermined distance.

REFERENCES:
patent: 3759759 (1973-09-01), Solomon
patent: 3854447 (1974-12-01), Kobayashi
patent: 3859148 (1975-01-01), Dawson et al.
patent: 3870575 (1975-03-01), Dosen
patent: 3893875 (1975-07-01), Watanabe et al.

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