Method of making a light emitting diode

Details Method of making a light emitting diode Method of making a light emitting diode

1980-03-18

1981-11-17

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29569L, H01L 21208

Patent

active

043009603

ABSTRACT:
A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps of
growing a first p-type epitaxial layer from a gallium melt containing Zn, and Ga.sub.2 O.sub.3 and GaP on an n-type GaP substrate, or on an n-type epitaxial layer formed on an n-type GaP substrate, at a cooling rate greater than 3.degree. C./min., and
growing a second p-type epitaxial layer from the gallium melt on the first p-type epitaxial layer at a cooling rate less than 1.5.degree. C./min. This procedure makes the p-type carrier density high at the surface region of the second p-type epitaxial layer and the density of Zn-O pairs high in the first p-type epitaxial layer.

REFERENCES:
patent: 3578513 (1971-05-01), Pilkuhn et al.
patent: 3589336 (1971-06-01), Bergh
patent: 3690964 (1972-09-01), Saul
patent: 3703671 (1972-11-01), Saul
patent: 3951699 (1976-04-01), Naito et al.
patent: 3951700 (1976-04-01), Beppu et al.
patent: 4017880 (1977-04-01), Kasami et al.
patent: 4051061 (1977-09-01), Bhargava et al.
patent: 4154630 (1979-05-01), Diguet et al.
patent: 4180423 (1979-12-01), Naito et al.

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