Method of making a lead-on-chip device

Details Method of making a lead-on-chip device Method of making a lead-on-chip device

2005-07-05

2005-07-05

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S112000, C438S124000, C438S127000, C257S618000

Reexamination Certificate

active

06913951

ABSTRACT:
A semiconductor device which is sealed with a plastic sealing layer and whose thickness is regulated to be below a given value is known. Since the thickness of the device is small, and the thickness of the upper portion of the plastic sealing layer and the thickness of the lower portion thereof are different from each other, the plastic sealing layer becomes warped, thus causing a crack on the side of the semiconductor chip.To solve this problem, the semiconductor device according to the present invention comprises a semiconductor chip on which a plurality of grooves are defined. Consequently, the thickness of the lower portion of the plastic layer becomes greater, thereby preventing cracks from occurring on the semiconductor chip.

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