Method of making a lateral transistor

Details Method of making a lateral transistor Method of making a lateral transistor

1989-04-13

1990-10-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437193, 437203, 437162, 148DIG50, 357 35, H01L 21331

Patent

active

049652176

ABSTRACT:
A method of fabricating a lateral transistor is provided, including the steps of: providing a body of semiconductor material including a device region of a first conductivity type; patterning the surface of the device region to define a first transistor region; filling the patterned portion of the device region surrounding the first transistor region with an insulating material to a height generally equal to the surface of with first transistor region; removing portions of the insulating material so as to define a pair of trenches generally bonding opposite sides of the first transistor region; filling the pair of trenches with doped conductive material of opposite conductivity type to the first transistor region; and annealing the semiconductor body whereby to form second and third transistor regions of opposite conductivity type to the first transistor region in the opposing sides of the first transistor region.

REFERENCES:
patent: 4333227 (1982-06-01), Horng
patent: 4378630 (1983-04-01), Horng

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