Method of making a lateral bipolar heterojunction structure

Details Method of making a lateral bipolar heterojunction structure Method of making a lateral bipolar heterojunction structure

1989-11-09

1992-04-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 89, 437122, 437926, 357 35, H01L 2120

Patent

active

051028123

ABSTRACT:
A method of fabricating a lateral bipolar heterojunction transistor and the transistor itself. In a first embodiment a first semiconductor layer of, for instance, InGaAsP is epitaxially grown on an insulating substrate with the subsequent selective area epitaxial regrowth of a second semiconductor layer, of for instance, InP on the substrate and adjacent to the base. The selective area regrowth forms the collector and emitter. Alternatively, the emitter and collector can be grown first and the base is regrown. In both cases, the semiconductor regrowth is epitaxial to the underlying substrate and to the semiconductor material at the side. Thereby, interface damage at the interface between the base and the emitter or collector is reduced so as to allow lateral minority carrier transport across the junction and small area junctions at low capacitance.

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