Method of making a junction type field effect transistor

Details Method of making a junction type field effect transistor Method of making a junction type field effect transistor

1976-05-05

1977-07-19

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 148174, 357 22, 357 59, H01L 2174, H01L 2980

Patent

active

040366723

ABSTRACT:
In the manufacture of a vertical structure junction type field effect transistor, the formation of a gate region is followed by an oxidation treatment of the upper surface of the gate region and then by the growth of a semiconductor layer consisting of a monocrystalline region on the channel portion and a polycrystalline region on the oxide film formed on the gate region. The existence of the oxide film on the gate region prevents the out-diffusion of the impurity doped in the gate region, preventing the lowering of the breakdown voltage, and enabling a short channel length and small series resistance of the channel.

REFERENCES:
patent: 3497777 (1970-02-01), Teszner
patent: 3617826 (1971-11-01), Kobayashi
patent: 3619737 (1971-11-01), Chiu
patent: 3648128 (1972-03-01), Kobayashi
patent: 3653120 (1972-04-01), Sirrine et al.
patent: 3681668 (1972-08-01), Kubayashi
patent: 3725751 (1973-04-01), Wakamiya
patent: 3814995 (1974-06-01), Teszner
patent: 3977017 (1976-08-01), Ishitani

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