Method of making a III-V complementary heterostructure device wi

Details Method of making a III-V complementary heterostructure device wi Method of making a III-V complementary heterostructure device wi

1993-06-25

1996-01-02

Fourson, George

Fishing, trapping, and vermin destroying

437184, 437192, H01L 2170, H01L 2700, H01L 2144, H01L 2148

Patent

active

054808294

ABSTRACT:
The present invention encompasses a complementary semiconductor device having the same type of material providing the ohmic contacts (117, 119) to both the N-type and P-type devices. In a preferred embodiment, P-source and P -drain regions ( 80, 82 ) are heavily doped with a P-type impurity (81, 83) so that an ohmic with N-type impurity can be used as an ohmic contact. One ohmic material that may be used is nickel-germanium-tungsten. Nickel-germanium-tungsten is etchable, and therefore does not require lift-off processing. Furthermore, a preferred complementary semiconductor device made in accordance with the present invention is compatible with modern aluminum based VLSI interconnection processes.

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