Method of making a hydrogen-rich, low dielectric constant gate i

Details Method of making a hydrogen-rich, low dielectric constant gate i Method of making a hydrogen-rich, low dielectric constant gate i

1997-03-20

1998-06-30

Achutamurthy, Ponnathapura

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 70, 445 50, 445 52, 313336, 313497, 313552, 313551, 25218825, H01J 900, H01J 1924, H01J 938, C01B 300

Patent

active

057724857

ABSTRACT:
An emitter structure 12 for use in a field emission display device comprises a ballast layer 17 overlying an electrically conductive coating 16 (cathode electrode), which is itself formed on an electrically insulating substrate 18. A gate electrode comprises a coating of an electrically conductive material 22 which is deposited on an insulating layer 20. Cone-shaped microtips 14 formed within apertures 34 through conductive layer 22 and insulating layer 20. In the present invention, insulating layer 20 comprises a dielectric material capable of desorbing at least ten atomic percent hydrogen, which may illustratively comprise hydrogen silsesquioxane (HSQ). HSQ is an abundant source of hydrogen which keeps deleterious oxides from forming on microtip emitters 14. HSQ also reduces the capacitance formed by cathode electrode 16 and gate electrode 22, since its relative dielectric constant is less than 3.5. In alternative embodiments, the gate insulation layer 20 additionally includes one or more sublayers of a more dense insulating material 20b and 20c, typically a plasma deposited silicon dioxide.

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