Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2007-06-19
2007-06-19
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S106000, C257SE23048
Reexamination Certificate
active
11081892
ABSTRACT:
A Method of Making a High Precision Microelectromechanical Capacitor with Programmable Voltage Source includes steps for forming a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision, programmable voltage source. The trim capacitor has a variable capacitance value, preferably for making fine adjustments in capacitance. The capacitance actuator is preferably mechanically coupled to and electrically isolated from the trim capacitor and is used to control the capacitance value of the trim capacitor. The capacitance adjustment of the trim capacitor is non-destructive and may be repeated indefinitely. The trim capacitor may be adjusted by mechanically changing the distance between its electrodes. The programmable voltage source provides a highly accurate and stable output voltage potential corresponding to control signals for controlling the capacitance actuator. The programmable voltage source may optionally include a floating-gate transistor coupled to an amplifier for storing charge and therefore, providing a non-volatile, stable, and adjustable output voltage potential.
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de la Houssaye Paul R.
Lagnado Isaac
Geyer Scott B.
Kagan Michael A.
Lee Allan Y.
Stevens Walter S.
Ullah Elias
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