Method of making a high performance MESFET with multiple quantum

Details Method of making a high performance MESFET with multiple quantum Method of making a high performance MESFET with multiple quantum

1994-02-18

1995-05-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 90, 437110, 437126, 148DIG72, 148DIG160, H01L 2120, H01L 21265

Patent

active

054200598

ABSTRACT:
A superheterojunction Field Effect Transistor (FET) with a multi-region channel on a Silicon (Si) substrate. The FET is a Metal Semiconductor FET (MESFET) or, alternatively, a Junction FET (JFET). The multi-region channel has: A first region of Si extending from the FET's source to a point under the FET's gate, beyond the gate's midpoint; a second region extending from the first region to the FET's drain, comprised of a superlattice of alternating Si and SiGe layers; and, a third region of Si extending under the first two regions from the source to the drain. The first region has a laterally graded dopant that creates an accelerating electric field. The superlattice structure increases electron mobility and transit velocity.

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