Method of making a high electron mobility transistor

Details Method of making a high electron mobility transistor Method of making a high electron mobility transistor

1993-03-03

1994-03-22

Hearn, Brian

Fishing, trapping, and vermin destroying

437184, 437912, 148DIG72, 148DIG113, H01L 21265

Patent

active

052963950

ABSTRACT:
A high electron mobility transistor is disclosed, which takes advantage of the increased mobility due to a two dimensional electron gas occurring in GaN/Al.sub.x Ga.sub.1-x N heterojunctions. These structures are deposited on basal plane sapphire using low pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is approximately 620 cm.sup.2 per volt second at room temperature as compared to 56 cm.sup.2 per volt second for bulk GaN of the same thickness deposited under identical conditions. The mobility of the bulk sample peaked at 62 cm.sup.2 per volt second at 180.degree. K. and decreased to 19 cm.sup.2 per volt second at 77.degree. K. The mobility for the heterostructure, however, increased to a value of 1,600 cm.sup.2 per volt second at 77.degree. K. and saturated at 4.degree. K.

REFERENCES:
patent: Re33671 (1991-08-01), Dingle et al.
patent: 4268842 (1981-05-01), Jacob et al.
patent: 4614961 (1986-09-01), Khan et al.
patent: 4616248 (1986-10-01), Khan et al.
patent: 4759024 (1988-07-01), Hayakawa et al.
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4903088 (1990-02-01), Van Opdorp
patent: 5076860 (1991-12-01), Ohba et al.
patent: 5147817 (1992-09-01), Frazier et al.
patent: 5201051 (1993-05-01), Carter, Jr.
Khan et al; "Electrical Properties and ion implantation of epitaxial GaN, grown by LPMOCVD", Appl. Phys. Lett., vol. 42, pp. 430-432; Mar. 1983.
Amano et al; "Stimulated Emission Near Ultraviolet at Room Temp. from a GaN film Grown on Sapphire by MOVPE Using an AlN."
Buffer layer; Jap. Jour. of Appl. Phys., 29(2), L205-6, Feb. 1990.
Ilegems et al; Electrical Properties of n-Type Vapor Grown GaN, J. Phys. Chem. Solids, vol. 34, pp. 885-895, 1973.
S. Yoshida et al., J. Appl. Phys. vol. 53, p. 6844, 1982.
S. Hiyamizu, Appl. Phys. Lett., vol. 37, p. 805, 1980.
M. Gershenzon et al., 1981 International Optoelectronics Workshop, National Chang Kung University, Tinan Tai Wan, p. 55 (Dec. 1981).

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