Method of making a high density IC module assembly

Details Method of making a high density IC module assembly Method of making a high density IC module assembly

1986-08-13

1988-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

29740, 357 73, 156644, 156662, 174 52PE, 437982, 437981, H01L 2156, H01L 2330

Patent

active

047229144

ABSTRACT:
An electronic module having a high density of silicon IC chips is provided by mounting the chips in tapered through-holes in a silicon substrate, filling the edge gaps between the chips and the substrate with a glass so that the chips, the filler glass, and the substrate have a smooth upper surface adapted to receive monolithic interconnections formed by planar metalization methods. The resulting assembly is enclosed in a housing also formed substantially from silicon, which contains electrically isolated pins for contacting the input-output electrodes of the assembly. Preferential etching is used to form the through-holes in the substrate as well as various alignment means on the substrate and other parts of the housing so that they are self-aligning during assembly. Improved performance, reliability, and low cost is obtained.

REFERENCES:
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patent: 3777221 (1973-12-01), Tatusko et al.
patent: 4189825 (1980-02-01), Rolliard et al.
patent: 4445952 (1984-05-01), Reynolds, III et al.
Ahearn and Beck, "Silicone Heat Sink Method to Control Integrated Circuit Chip Operating Temperatures", IBM Technical Disclosure Bulletin, vol. 21, No. 8, 1-79, pp. 3378-3390.

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