Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1977-06-22
1978-03-14
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01J 904
Patent
active
040789004
ABSTRACT:
A high current density long life cathode for use in high power microwave e applications is made by: machining a porous tungsten pellet with copper in its pores to the desired cathode shape to form the emitting surface of the cathode and cleaning the porous pellet ultrasonically in trichloroethylene, then acetone, and then methanol; firing the tungsten pellet at about 1800.degree. C in a reducing atmosphere; etching the tungsten pellet ultrasonically in a solution of 50 parts of concentrated nitric acid in 50 parts of water; ultrasonically cleaning the tungsten pellet for about five minutes in an aqueous alkaline solution; cleaning the tungsten pellet in hot deionized water and then air drying the tungsten pellet in an oven for five minutes at about 150.degree. C; refiring the tungsten pellet in a reducing atmosphere at about 1800.degree. C; impregnating the porous tungsten pellet with a mixture of Ba.sub.3 WO.sub.6, Ba.sub.2 SrWO.sub.6 and ZrH.sub.2 in a nonreducing, nonoxidizing atmosphere at about 1900.degree. C to 2000.degree. C; and firing the impregnated tungsten pellet in a reducing atmosphere of dry hydrogen at about 1840.degree. C for about 2 to 5 minutes.
REFERENCES:
patent: 3525135 (1970-08-01), Bondley
Newman Albert F.
Smith Bernard
Edelberg Nathan
Gordon Roy E.
Lazarus Richard B.
Murray Jeremiah G.
The United States of America as represented by the Secretary of
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