Method of making a high conductivity p-plus region for self-alig

Details Method of making a high conductivity p-plus region for self-alig Method of making a high conductivity p-plus region for self-alig

1994-06-24

1995-05-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 27, 437 55, 437147, 437978, H01L 21265, H01L 2170, H01R 2122

Patent

active

054160324

ABSTRACT:
According to the present invention, using an emitter-P.sup.+ (E-P) mask, a low resistance, high conductivity P.sup.+ region of a self-aligned bipolar transistor device is formed prior to the formation of a base region. The P.sup.+ diffusion and drive can thus be accomplished without concern for adverse effects on the base region of the bipolar transistor device, which is yet to be formed. After the P+ diffusion and drive step, the emitter of the bipolar transistor device is uncovered and a base mask used to allow a base implant step. A high base implant energy of approximately 35 to 40 KEV is used to completely penetrate the E-P mask layers, thereby providing a usable, linked base region in the active areas of the bipolar transistor device.

REFERENCES:
patent: 3725150 (1973-04-01), George
patent: 4055884 (1977-11-01), Jambotkar
patent: 4110126 (1978-08-01), Bergeron et al.
patent: 4201800 (1980-05-01), Alcorn et al.
patent: 5328857 (1994-07-01), Imhauser

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